s m d ty p e w w w . k e x i n . c o m . c n 1 m osf e t p - ch an n el m osf et nds 352a p ( k d s 3 5 2 a p ) f e a tu r e s v d s ( v ) = - 3 0 v i d = - 0 . 9 a ( v g s = - 4 . 5 v ) r d s ( o n ) 0 . 3 ( v g s = - 1 0 v ) r d s ( o n ) 0 . 5 ( v g s = - 4 . 5 v ) 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 3 unit: mm sot-23-3 1 . 6 1.gate 2.source 3.drain 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 d s g a b s o l u te m a x i m u m ra ti n g s t a = 2 5 p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s - 3 0 g a t e - s o u r c e v o l t a g e v g s 2 0 c o n t i n u o u s d r a i n c u r r e n t i d - 0 . 9 p u l s e d d r a i n c u r r e n t i d m - 1 0 p o w e r d i s s i p a t i o n ( n o t e . 1 ) 0 . 5 ( n o t e . 2 ) 0 . 4 6 t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t r t h ja 2 5 0 t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - c a s e r t h jc 7 5 j u n c t i o n t e m p e r a t u r e t j 1 5 0 j u n c t i o n s t o r a g e t e m p e r a t u r e r a n g e t st g - 5 5 t o 1 5 0 p d w v / w a n o t e . 1 : 2 5 0 / w w h e n m o u n t e d o n a 0 . 0 2 i n 2 p a d o f 2 o z c o p p e r . n o t e . 2 : 2 7 0 / w w h e n m o u n t e d o n a 0 . 0 0 1 i n 2 p a d o f 2 o z c o p p e r .
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t p - ch an n el m osf et nds 352a p ( k d s 3 5 2 a p ) e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = - 2 5 0 a , v g s = 0 v - 3 0 v v d s = - 2 4 v , v g s = 0 v - 1 v d s = - 2 4 v , v g s = 0 v , t j = 1 2 5 - 1 0 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 0 n a v d s = v g s i d = - 2 5 0 a - 0 . 8 - 1 . 7 - 2 . 5 v d s = v g s i d = - 2 5 0 a , t j = 1 2 5 - 0 . 5 - 1 . 4 - 2 . 2 v g s = - 4 . 5 v , i d = - 0 . 9 a 4 5 0 5 0 0 v g s = - 4 . 5 v , i d = - 0 . 9 a t j = 1 2 5 6 5 0 7 0 0 v g s = - 1 0 v , i d = - 1 a 2 5 0 3 0 0 o n s t a t e d r a i n c u r r e n t i d ( o n ) v g s = - 4 . 5 v , v d s = - 5 v - 2 a f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = - 5 v , i d = - 0 . 9 a 1 . 9 s i n p u t c a p a c i t a n c e c i ss 1 3 5 o u t p u t c a p a c i t a n c e c o ss 8 8 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 4 0 t o t a l g a t e c h a r g e q g 2 3 g a t e s o u r c e c h a r g e q g s 0 . 5 g a t e d r a i n c h a r g e q g d 1 t u r n - o n d e l a y t i m e t d ( o n ) 5 1 0 t u r n - o n r i s e t i m e t r 1 7 3 0 t u r n - o f f d e l a y t i m e t d ( o f f ) 3 5 7 0 t u r n - o f f f a l l t i m e t f 3 0 6 0 t u r n - o n d e l a y t i m e t d ( o n ) 8 1 5 t u r n - o n r i s e t i m e t r 1 6 3 0 t u r n - o f f d e l a y t i m e t d ( o f f ) 3 5 9 0 t u r n - o f f f a l l t i m e t f 3 0 9 0 m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s - 0 . 4 2 p u l s e d d r a i n - s o u r c e d i o d e f o r w a r d c u r r e n t i s m - 1 0 d i o d e f o r w a r d v o l t a g e v s d i s = - - 0 . 4 2 a , v g s = 0 v ( n o t e . 1 ) - 0 . 8 - 1 v a n s z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s a m r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v v g s = - 4 . 5 v , v d s = - 1 0 v , i d = - 1 a , r g = 6 ( n o t e . 1 ) v g s = 0 v , v d s = - 1 5 v , f = 1 m h z v g s = - 4 . 5 v , v d s = - 6 v , i d = - 0 . 9 a ( n o t e . 1 ) p f n c v g s = - 1 0 v , v d s = - 1 0 v , i d = - 1 a , r g = 5 0 ( n o t e . 1 ) m a r k i n g m a r k i n g 3 5 2 a
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t p - ch an n el m osf et nds 352a p ( k d s 3 5 2 a p ) t y p i c a l ch a r a c te r i s i ti c s figure 1. on-region characteristic s . figure 2. on-resistance variatio n with drain current and gate voltag e . figure 3. on-resistance variation with t em p era tu re . figure 4. on-resistance variation with drain current and temperatur e . figure 5. transfer characteristics . figure 6. gate threshold variation with temperatur e . - 4 - 3 - 2 - 1 0 0 . 2 0 . 4 0 . 6 0 . 8 1 1 . 2 1 . 4 1 . 6 i , drain current (a ) drain-source on-resistance d r , normalized ds(on) v = -4.5 v g s t = 125 c j 25 c -55 c - 6 - 5 - 4 - 3 - 2 - 1 - 4 -3. 2 -2. 4 -1. 6 -0. 8 v , g a t e to s o urce v o l t a g e (v ) i , drain current (a) 2 5 1 2 5 v = -10 v d s g s d t = -55 c j -5 0 -2 5 0 2 5 5 0 7 5 10 0 12 5 15 0 0 . 7 0 . 8 0 . 9 1 1 . 1 1 . 2 t , junction temperature (c ) gate-source threshold voltage -5 0 -2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 . 6 0 . 8 1 1 . 2 1 . 4 1 . 6 t , junction temperature (c ) drain-source on-resistance j v = -4.5 v g s i = -0.9 a d r , normalized ds(on) - 5 - 4 - 3 - 2 - 1 0 - 5 - 4 - 3 - 2 - 1 0 v , drain-source voltage (v ) i , drain-source current (a) v = -10 v g s d s d -3.0 -3.5 -7.0 -5.0 -4.5 -4.0 -6.0 -5.5 - 5 - 4 - 3 - 2 - 1 0 0 . 4 0 . 6 0 . 8 1 1 . 2 1 . 4 1 . 6 i , drain current (a ) drain-source on-resistance v = -3.5 v g s d r , normalized ds(on) -10 -5. 5 -6. 0 -4. 5 -7.0 -4. 0 -5. 0
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . p - ch an n el m osf et nds 352a p ( k d s 3 5 2 a p ) t y p i c a l ch a r a c te r i s i ti c s figure 7. breakdown voltage variation wit h temperatur e . figure 8. body diode forward voltage variation wit h sou rce c u rre nt a nd t em p era tu r e . g d s v d d r l v v i n ou t v g s du t r ge n figure 9. ca p ac i ta n ce c h aracter i st i c s . figu re 10 . g a t e c h ar g e c h arac t er i s ti c s . figure 11. s wi tch i ng test c i rcu i t . figure 12. swit c hing w ave fo rm s . -5 0 -2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0.9 4 0.9 6 0.9 8 1 1.0 2 1.0 4 1.0 6 1.0 8 1. 1 t , junction temperature (c ) drain-source breakdown voltage i = -250 a d j bv , normalized dss 0 0 . 2 0 . 4 0 . 6 0 . 8 1 1 . 2 1 . 4 0 . 000 1 0.00 1 0 . 0 1 0 . 1 1 4 -v , body diode forward voltage (v ) -i , reverse drain current (a) t = 125 c j 25 c -55 c v = 0 v g s s d s 0 . 1 0 . 2 0 . 5 1 2 5 1 0 2 0 3 0 2 0 3 0 5 0 1 0 0 2 0 0 3 0 0 4 0 0 -v , dra i n to s o urce v o l t a g e (v ) capacitance (pf) d s c i s s f = 1 mh z v = 0 v g s c os s c rs s 0 1 2 3 4 5 0 2 4 6 8 1 0 q , gate ch a r ge ( nc ) -v , gate-source voltage (v) g gs v = -5 v d s -1 0 -1 5 i = -0.9 a d 1 0 % 5 0 % 9 0 % 1 0 % 9 0 % 9 0 % 5 0 % v i n v ou t o n o f f d ( o ff ) f r d ( on ) t t t t t t inverte d 1 0 % p ulse width
s m d ty p e w w w . k e x i n . c o m . c n 5 m osf e t p - ch an n el m osf et nds 352a p ( k d s 3 5 2 a p ) t y p i c a l ch a r a c te r i s i ti c s figure 14. maximum safe operating area . figure 17. transient thermal response curve . no t e : cha r a ct e r i z a t ion pe rf o rm ed u s ing t he c ondi t ion s de scr ibed in no t e 1b . tr an s ien t t he rm al r e s pon s e wil l change depending on the circuit board desig n . - 5 - 4 - 3 - 2 - 1 0 0 0 . 5 1 1 . 5 2 2 . 5 3 i , dr ai n curr e n t (a ) g , transconductance (siemens) t = -55 c j 25 c d fs v = - 5 v d s 125 c 0 . 1 0 . 2 0 . 5 1 2 5 1 0 2 0 3 0 5 0 0 . 0 1 0 . 0 5 0 . 1 0 . 5 1 2 5 1 0 2 0 - v , drain-source voltage (v ) -i , drain current (a) rds( o n) l i m i t d a dc d s 1 s 100m s 10m s 1ms 10 s v = -4.5 v single puls e r = see note 1 b t = 25 c j a g s a 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 6 0 . 7 0 . 8 0 . 9 1 1 . 1 1 . 2 2oz copper mounting pad area (in ) -i , steady-state drain current (a) 2 1 b 1 a d 4 . 5"x5" f r-4 boar d t = 25 c still ai r v = -4.5 v a o g s 0 0 . 1 0 . 2 0 . 3 0 . 4 0 0 . 2 0 . 4 0 . 6 0 . 8 1 2oz copper mounting pad area (in ) steady-state power dissipation (w) 2 1 b 1 a 2 1 b 4 . 5"x5" f r-4 boar d t = 25 c still ai r a o figue 15. superso t t m _ 3 max i m u m steady - stat e power dissipatio n versu s copper mounting pad area. figure 13. transconductance variation with drai n current and temperatur e . figu re 1 6 . maximum steady-state drai n current versus copper mounting pad are a . 0.000 1 0.00 1 0.0 1 0 . 1 1 1 0 10 0 30 0 0.00 1 0.00 2 0.00 5 0.0 1 0.0 2 0.0 5 0 . 1 0 . 2 0 . 5 1 t , time (s e c ) transient thermal resistance duty cycle, d = t / t 1 2 r (t) = r(t) * r r = see no te 1 b j a j a ja t - t = p * r (t) j a a j p(pk ) t 1 t 2 r(t), normalized effective 1 single pulse d = 0.5 0 . 1 0 . 05 0 . 02 0 . 01 0 . 2
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